vishay siliconix SIS902DN document number: 64804 s09-0661-rev. a, 20-apr-09 www.vishay.com 1 dual n-channel 75-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? low thermal resistance powerpak ? package with small size and low 1.07 mm profile ? 100 % r g tested ? 100 % uis tested ? compliant to rohs directive 2002/95/ec applications ? pol product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) 75 0.186 at v gs = 10 v 4 e 2.1 nc 0.228 at v gs = 4.5 v 4 e powerpak 1212-8 bottom view 1 2 3 4 5 6 7 8 s1 g1 s2 g2 d1 d1 d2 d2 3.30 mm 3.30 mm ordering information: SIS902DN-t1-ge3 (lead (pb)-free and halogen-free) n-channel mosfet g 1 d 1 s 1 n-channel mosfet g 2 d 2 s 2 notes: a. surface mounted on 1" x 1" fr4 board. b. t = 10 s. c. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak 1212-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bo ttom side solder interconnection. d. rework conditions: manual soldering with a solder ing iron is not recommended for leadless components. e. package limited. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 75 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 4 e a t c = 70 c 4 e t a = 25 c 3 a, b t a = 70 c 2.4 a, b pulsed drain current i dm 8 avalanche current l = 0.1 mh i as 2 single-pulse avalanche energy e as 0.2 mj maximum power dissipation t c = 25 c p d 15.4 w t c = 70 c 9.9 t a = 25 c 3.1 a, b t a = 70 c 2 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) c, d 260
www.vishay.com 2 document number: 64804 s09-0661-rev. a, 20-apr-09 vishay siliconix SIS902DN notes: a. surface mounted on 1" x 1" fr4 board. b. maximum under steady state conditions is 78 c/w. thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, b t 10 s r thja 32 40 c/w maximum junction-to-case (drain) steady state r thjc 6.4 8.1 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 75 v v ds temperature coefficient v ds /t j i d = 250 a 81 mv/c v gs(th) temperature coefficient v gs(th) /t j - 5 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.2 2.5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 75 v, v gs = 0 v 1 a v ds = 75 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 8a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 3 a 0.155 0.186 v gs = 4.5 v, i d = 2.7 a 0.190 0.228 forward transconductance a g fs v ds = 15 v, i d = 3 a 10 s dynamic b input capacitance c iss v ds = 38 v, v gs = 0 v, f = 1 mhz 175 pf output capacitance c oss 30 reverse transfer capacitance c rss 18 total gate charge q g v ds = 38 v, v gs = 10 v, i d = 3 a 3.9 6 nc v ds = 38 v, v gs = 4.5 v, i d = 3 a 2.1 3.2 gate-source charge q gs 0.8 gate-drain charge q gd 0.6 gate resistance r g f = 1 mhz 0.4 2 4 tu r n - o n d e l ay t i m e t d(on) v dd = 38 v, r l = 16 i d ? 2.4 a, v gen = 4.5 v, r g = 1 17 26 ns rise time t r 18 27 turn-off delay time t d(off) 12 20 fall time t f 918 tu r n - o n d e l ay t i m e t d(on) v dd = 38 v, r l = 16 i d ? 2.4 a, v gen = 10 v, r g = 1 510 rise time t r 816 turn-off delay time t d(off) 10 20 fall time t f 610
document number: 64804 s09-0661-rev. a, 20-apr-09 www.vishay.com 3 vishay siliconix SIS902DN notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 4 a pulse diode forward current a i sm 8 body diode voltage v sd i s = 2 a 0.85 1.2 v body diode reverse recovery time t rr i f = 2.4 a, di/dt = 100 a/s, t j = 25 c 20 30 ns body diode reverse recovery charge q rr 17 26 nc reverse recovery fall time t a 15 ns reverse recovery rise time t b 5
www.vishay.com 4 document number: 64804 s09-0661-rev. a, 20-apr-09 vishay siliconix SIS902DN typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 2 4 6 8 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10 v thr u 5 v v gs =3 v v gs =4 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.10 0.15 0.20 0.25 0.30 0246 8 v gs =10 v v gs =4.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 012345 i d =3a v ds =60 v v ds =3 8v v ds =19 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.0 0.5 1.0 1.5 2.0 01234 t c = 25 c t c = 125 c t c = - 55 c c rss 0 50 100 150 200 250 0 1530456075 c iss c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) 0.5 0. 8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 v gs =4.5 v ;i d =2.7a v gs =10 v ;i d =3a t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on)
document number: 64804 s09-0661-rev. a, 20-apr-09 www.vishay.com 5 vishay siliconix SIS902DN typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.5 1.0 1.5 t j = 150 c t j = 25 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1.2 1.5 1. 8 2.1 2.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.0 0.1 0.2 0.3 0.4 0.5 01234567 8 910 i d =3a t j = 25 c t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 time (s) po w er ( w ) safe operating area, junction-to-ambient 10 0.1 0.1 1 10 1 t a = 25 c single p u lse 1ms 0.01 1s 10 s 100 100 s limited b yr ds(on)* 10 ms 100 ms v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d dc
www.vishay.com 6 document number: 64804 s09-0661-rev. a, 20-apr-09 vishay siliconix SIS902DN typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 0 25 50 75 100 125 150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power, junction-to-case 0 5 10 15 20 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) power, junction-to-ambient 0.0 0.5 1.0 1.5 2.0 0 25 50 75 100 125 150 t a -am b ient temperat u re (c) po w er ( w )
document number: 64804 s09-0661-rev. a, 20-apr-09 www.vishay.com 7 vishay siliconix SIS902DN typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64804 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 0 1 0 1 1 10 -1 100 0.2 0.1 0.05 0.02 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 d u ty cycle = 0.5 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =7 8 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted single p u lse normalized thermal transient impedance, junction-to-case 1 0.1 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 10 -3 10 -2 1 10 -1 10 -4 0.05 0.02 single p u lse 0. 1 0.2
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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